PART |
Description |
Maker |
S82S19 S82S09 |
(S82S09 / S82S19) 576-BIT BIPOLAR RAM
|
ETC
|
THM401020SG-80 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines 1,048,576 WORDSx40位动态RAM模块 1,048,576 WORDSx40 BIT DYNAMIC RAM MODULE 1/048/576 WORDSx40 BIT DYNAMIC RAM MODULE
|
Toshiba, Corp. Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
VG26S18165CJ-5 VG26S18165CJ-6 VG26V18165CJ-5 VG26V |
1,048,576 x 16 - Bit CMOS EDO DRAM 1,048,576 x 16 - Bit CMOS Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
MR53V1652J |
1,048,576-Word X 16-Bit or 2,097,152-Word X 8-Bit 8Word X 16-Bit or 16Word X 8-Bit/Page Mode MASK ROM From old datasheet system
|
OKI
|
M6MGB331S8AKT M6MGT331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
MSM538052E |
524,288-Words x 16-bit or 1,048,576-Bytes x 8-bit MaskROM From old datasheet system
|
OKI
|
MSM531655E-XXGS-K MSM531655E-XXTS-K MSM531655E |
524,288-Double Words x 32-bit or 1,048,576-Words x 16-bit MaskROM, 8Double Word x 32-Bit or 16Word x 16-Bit/Page Mode MASKROM
|
OKI electronic componets
|
M6MGB_T166S4BWG M6MGB E99008_A |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY From old datasheet system
|
Mitsubishi
|
M6MGB E99007 |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY From old datasheet system
|
Mitsubishi
|
AM29F800T-90EC AM29F800T-90ECB AM29F800T-90FI AM29 |
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
|
AMD[Advanced Micro Devices]
|
MR27V852E MR27V852ERA MR27V852EJA |
524,288 Word X 16 - Bit or 1,048,576 - Word X 8 - Bit 8 - Word x 16-Bit or 16 - Word x 8-Bit Page Mode One Time PROM
|
OKI[OKI electronic componets]
|